As1 Tm1

semiconductor

· As1 Tm1

AS1 TM1 is a semiconductor compound from the arsenic-based III-V material family, likely representing an experimental or research-phase composition with potential applications in optoelectronic and high-frequency devices. This material family is valued in advanced electronics for its direct bandgap properties and electron mobility characteristics, making it relevant where conventional silicon reaches performance limits. Engineers would consider AS1 TM1 primarily in specialized research contexts or emerging technologies requiring III-V semiconductors, though the specific composition and maturity level suggest this may be a proprietary or developmental designation warranting vendor consultation before integration into production designs.

research optoelectronicshigh-frequency RF devicesexperimental semiconductorscompound semiconductor researchintegrated circuit developmentphotovoltaic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	83.63	GPa	—
Shear Modulus(G)	61.52	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1392	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.560	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

As1 Tm1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control