As₁Se₂Ag₁ is a mixed-valence chalcogenide semiconductor compound combining arsenic, selenium, and silver. This ternary material belongs to the family of metal chalcogenides and is primarily investigated in research contexts for its electronic and photonic properties, rather than as an established commercial material. The silver doping modifies the electronic band structure and carrier transport compared to binary arsenic selenide, making it of interest for optoelectronic devices, photosensors, and potentially nonlinear optical applications where tuned carrier dynamics are desirable.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 68.77 | GPa | — | ||
Shear Modulus(G) | 26.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01370 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.09200 | eV/atom | — |