As1 N1 O2 F6

semiconductor

· As1 N1 O2 F6

As1N1O2F6 is an arsenic-nitrogen-oxygen-fluorine compound in the semiconductor material family, likely an experimental or specialized research composition rather than a commercial semiconductor. This compound belongs to the broader class of arsenic-based semiconductors and fluorine-containing materials, which are of interest in optoelectronics and high-frequency device research due to fluorine's influence on electronic properties and thermal stability.

experimental semiconductorsoptoelectronic researchhigh-frequency devicesarsenic compound systemsfluorine-doped materialsmaterials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.982	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.499	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

As1 N1 O2 F6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control