As1Ho1 is an experimental intermetallic semiconductor compound combining arsenic and holmium in a 1:1 stoichiometric ratio. This rare-earth arsenic compound belongs to the family of intermetallic semiconductors, which are primarily of research interest for exploring electronic and magnetic properties in rare-earth systems. Limited industrial deployment exists; this material is typically investigated in academic and specialized research contexts for potential applications in magnetoelectronic devices, though its practical engineering adoption remains nascent compared to established semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 82.70 | GPa | — | ||
Shear Modulus(G) | 60.66 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1933 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.586 | eV/atom | — |