As₁Er₁ is a binary intermetallic compound combining arsenic and erbium, representing a rare-earth semiconductor material. This composition falls within the family of rare-earth pnictide semiconductors, primarily explored in research contexts for potential optoelectronic and thermoelectric applications. The material's notable stiffness characteristics and semiconductor properties position it as a candidate for high-temperature or specialized electronic device research, though industrial-scale adoption remains limited compared to mainstream semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 83.23 | GPa | — | ||
Shear Modulus(G) | 61.40 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2294 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.574 | eV/atom | — |