AlV(TeO4)2 is a mixed-metal tellurate semiconductor compound combining aluminum, vanadium, and tellurium oxide in a layered crystal structure. This is a research-phase material primarily studied for optoelectronic and photonic applications, particularly in nonlinear optical devices and potentially as a tunable semiconductor for emerging photonic technologies. The vanadium-tellurate framework offers possibilities for enhanced optical and electrical properties compared to simpler binary tellurates, making it of interest to researchers exploring next-generation materials for laser systems and photonic integrated circuits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.900 | eV | — |