AlTeO2N

ceramic

· AlTeO2N

AlTeO2N is an experimental oxynitride ceramic compound combining aluminum, tellurium, oxygen, and nitrogen phases. This material belongs to the complex oxide-nitride family being investigated for high-temperature structural and electronic applications where conventional oxides or nitrides alone are insufficient. Research into AlTeO2N typically targets advanced thermal barriers, refractory components, or specialized semiconductor/photonic devices that benefit from the combined properties of oxide and nitride bonding.

high-temperature refractory systemsthermal barrier coatings (research)advanced ceramics developmentfunctional oxide-nitride compoundsspecialist semiconductor research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000222	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.880	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlTeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental