AlSbON2

semiconductor

· AlSbON2

AlSbON2 is an experimental oxonitride semiconductor compound combining aluminum, antimony, oxygen, and nitrogen elements. This material belongs to the emerging class of ternary and quaternary semiconductors being investigated for optoelectronic and high-temperature applications where conventional III–V semiconductors (like AlSb or GaN) reach performance limits. Research interest centers on tuning bandgap and thermal properties through composition control, though the material remains primarily in development stages rather than established commercial production.

Research semiconductorsHigh-temperature optoelectronicsWide-bandgap device developmentAdvanced nitride compound researchNext-generation III-V alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.200	eV	—
Magnetic Moment(μB)	0.0000507	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.180	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlSbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control