AlRuN3

semiconductor

· AlRuN3

AlRuN3 is a ternary nitride compound combining aluminum, ruthenium, and nitrogen, representing an experimental semiconductor material from the transition metal nitride family. While not yet commercialized at scale, this material is of research interest for its potential in high-temperature electronics and wear-resistant coatings, leveraging ruthenium's hardness and thermal stability combined with nitride's wide bandgap characteristics. Engineers considering this material should recognize it as an emerging compound still in development, with applications potentially spanning advanced semiconductor devices and protective surface treatments where extreme conditions demand alternative chemistries to conventional III-N semiconductors.

experimental semiconductor researchhigh-temperature electronic deviceswear-resistant coatingstransition metal nitride compoundsadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9000	eV	—
Magnetic Moment(μB)	0.0000691	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlRuN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control