AlInN3
metal· AlInN3
AlInN3 is a ternary nitride compound in the III-V semiconductor family, combining aluminum, indium, and nitrogen. This material is primarily of research interest for wide-bandgap semiconductor applications, particularly in high-frequency, high-power, and high-temperature electronic and optoelectronic devices where its tunable bandgap (between AlN and InN) offers advantages over binary nitrides. Its potential applications span next-generation RF power amplifiers, UV optoelectronics, and extreme-environment sensors, though commercial deployment remains limited compared to established GaN and AlN technologies.
wide-bandgap semiconductorsRF power devicesUV optoelectronicshigh-temperature electronicsresearch-phase materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.