AlHfO2N

ceramic
· AlHfO2N

AlHfO₂N is an experimental ceramic compound combining aluminum, hafnium, oxygen, and nitrogen phases, belonging to the family of advanced refractory and high-κ dielectric materials. This material is primarily investigated in semiconductor and thin-film research contexts for its potential as a gate dielectric or barrier layer, leveraging hafnium oxide's high dielectric constant and nitrogen doping to enhance thermal stability and interface properties. Compared to conventional SiO₂ or standard HfO₂, nitrogen incorporation aims to improve band alignment, reduce oxygen diffusion, and enable operation at reduced equivalent oxide thickness—making it relevant for next-generation logic and memory devices where traditional dielectrics approach physical limits.

semiconductor gate dielectricsadvanced CMOS devicesthin-film researchhigh-temperature barrier layersnext-generation memory technologiesrefractory compound development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Magnetic Moment(μB)
—
μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.