AlGaO2N

ceramic

· AlGaO2N

AlGaO₂N is a quaternary ceramic compound combining aluminum, gallium, oxygen, and nitrogen—a research-stage material within the oxynitride ceramic family. This material is primarily explored in academic and advanced materials research contexts for its potential as a wide-bandgap semiconductor or high-temperature ceramic, leveraging the combined properties of gallium nitride (GaN) and aluminum oxide (Al₂O₃) systems. AlGaO₂N remains largely experimental; engineers would consider it only in specialized high-temperature, high-frequency, or next-generation semiconductor applications where conventional GaN or AlN substrates have limitations.

wide-bandgap semiconductors (research)high-temperature ceramics (exploratory)power electronics substrates (future)RF/microwave device platforms (advanced)thermal management components (developmental)oxynitride research applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.01715	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.120	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental