AlGaN

metal

· JVASP-115089· AlGaN

AlGaN is a III-nitride semiconductor alloy combining aluminum and gallium nitride, engineered for high-performance optoelectronic and power electronic devices. It is widely used in ultraviolet (UV) light-emitting diodes, high-electron-mobility transistors (HEMTs) for RF and power applications, and deep-UV photonics, where its wide bandgap and high thermal stability outperform traditional silicon and GaAs alternatives. The aluminum content can be tuned to control bandgap energy, making it particularly valuable for applications requiring operation at elevated temperatures or in harsh environments.

UV LEDs and photodetectorsRF power transistorshigh-temperature electronicsmilitary/aerospace systemsdeep-UV photonicsGaN-based power devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	70.79	GPa	—
Shear Modulus(G)	32.01	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	3.483	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.8661	eV/atom	—
Formation Energy(ΔHf)	-0.2335	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlGaN

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control