AlGaAs is a III-V semiconductor alloy combining aluminum, gallium, and arsenic, engineered for optoelectronic and high-frequency applications. It is widely used in laser diodes, LEDs, and integrated photonic devices where its direct bandgap and lattice-matching properties enable efficient light emission and detection across the near-infrared spectrum. AlGaAs is valued over gallium arsenide in systems requiring higher bandgap energy, better thermal stability, or monolithic integration of optical and electronic functions, making it essential for fiber-optic communications, sensing, and quantum photonics research.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.356 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.6510 | eV | DFT · OptB88vdW | ||
| ↳ | 1.625 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 13.61 | - | DFT · OptB88vdW | ||
| ↳ | 9.027 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 30.45 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00650 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4526 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data