AlGaAs2

metal

· JVASP-106381· AlGaAs2

AlGaAs is a III-V semiconductor alloy combining aluminum, gallium, and arsenic, engineered for optoelectronic and high-frequency applications. It is widely used in laser diodes, LEDs, and integrated photonic devices where its direct bandgap and lattice-matching properties enable efficient light emission and detection across the near-infrared spectrum. AlGaAs is valued over gallium arsenide in systems requiring higher bandgap energy, better thermal stability, or monolithic integration of optical and electronic functions, making it essential for fiber-optic communications, sensing, and quantum photonics research.

laser diodes and optoelectronicsfiber-optic communicationsinfrared LEDs and photodetectorsphotonic integrated circuitshigh-frequency semiconductor devicesquantum optics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.356	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6510	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00650	eV/atom	—
Formation Energy(ΔHf)	-0.4526	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlGaAs2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control