AlGa₃N₄ is an advanced ceramic nitride compound combining aluminum and gallium nitrides, belonging to the family of III-V nitride semiconductors and ceramic materials. This material is primarily of research and developmental interest for high-temperature, high-power electronic and optoelectronic applications where extreme thermal stability and wide bandgap properties are advantageous. Engineers consider it for next-generation power devices, high-frequency transistors, and UV optoelectronics where conventional semiconductors reach performance limits, though commercial availability remains limited compared to established nitride alternatives like GaN and AlN.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 184.0 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 118.7 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.302 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.420 | eV | DFT · OptB88vdW | ||
| ↳ | 3.579 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.960 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 5.508 | - | DFT · OptB88vdW | ||
| ↳ | 4.246 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.2300 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.070 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.9321 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000441 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00339 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -68.01 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 371 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.9700 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00950 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.8325 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data