AlGa₃N₄ is an advanced ceramic nitride compound combining aluminum and gallium nitrides, belonging to the family of III-V nitride semiconductors and ceramic materials. This material is primarily of research and developmental interest for high-temperature, high-power electronic and optoelectronic applications where extreme thermal stability and wide bandgap properties are advantageous. Engineers consider it for next-generation power devices, high-frequency transistors, and UV optoelectronics where conventional semiconductors reach performance limits, though commercial availability remains limited compared to established nitride alternatives like GaN and AlN.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 184.0 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 118.7 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.302 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.420 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.960 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.9321 | C/m² | — | ||
Seebeck Coefficient(S) | -68.01 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00950 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8325 | eV/atom | — |