AlBOFN

semiconductor

· AlBOFN

AlBOFN is an experimental wide-bandgap semiconductor compound combining aluminum, boron, oxygen, and fluorine—a quaternary material system designed to extend optoelectronic and high-temperature device capabilities beyond conventional semiconductors. Research into this material family targets next-generation deep-ultraviolet (UV) emitters, high-breakdown-field power devices, and extreme-environment electronics where thermal stability and wide bandgap are critical. While not yet mature for production volumes, AlBOFN represents the frontier of engineered semiconductor compounds for applications requiring both UV transparency and enhanced electrical isolation at elevated temperatures.

deep-UV optoelectronicswide-bandgap power semiconductorshigh-temperature electronicsextreme-environment sensorsresearch and developmentadvanced photodetectors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	-2.775e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.520	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlBOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control