AlAsN3

metal

· AlAsN3

AlAsN3 is an experimental III-V nitride compound combining aluminum, arsenic, and nitrogen; it belongs to the family of wide-bandgap semiconductors being investigated for advanced optoelectronic and high-power device applications. While not yet commercially mature, materials in this chemical family are researched for potential use in ultraviolet (UV) emitters, high-electron-mobility transistors (HEMTs), and power electronics operating at extreme temperatures or high frequencies. Engineers considering AlAsN3 would do so in cutting-edge research settings where novel bandgap engineering or lattice-matched heterostructures are objectives, rather than as an established production material.

UV optoelectronics (research)High-power RF transistors (development)Wide-bandgap semiconductorsHeterostructure engineeringExtreme temperature electronics (exploration)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.8287	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlAsN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control