AlAgO2 is a mixed-metal oxide semiconductor combining aluminum and silver oxides, representing a compound of interest primarily in materials research rather than established industrial production. This material belongs to the family of transparent conducting oxides and wide-bandgap semiconductors, with potential applications where combined optical transparency and electrical conductivity are needed. While not yet widely deployed in commercial products, AlAgO2 is investigated for specialized optoelectronic and thin-film device applications where the unique properties of silver-doped aluminum oxide systems could offer advantages over single-component alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 154.0 | GPa | — | ||
| ↳ | 166.8 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G)2 entries | 60.14 | GPa | — | ||
| ↳ | 86.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.153 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.600 | eV | — | ||
| ↳ | 1.666 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.73 | - | — | ||
| ↳ | 11.33 | - | — | ||
| ↳ | 8.295 range 5.983–10.61median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -140.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.193 | eV/atom | — |