Al₄Sb₄O₁₄ is a mixed-metal oxide semiconductor compound combining aluminum and antimony oxides in a layered crystal structure. This material remains largely in the research and development phase, with investigation focused on its potential as a wide-bandgap semiconductor for optoelectronic and high-temperature electronic applications. Its mixed-valence composition and layered structure make it of interest for exploring novel photocatalytic properties and as a potential candidate in the broader family of complex oxide semiconductors for emerging device technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01340 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.636 | eV/atom | — |