Al3 Ga1 N4

semiconductor

· Al3 Ga1 N4

Al₃GaN₄ is an experimental wide-bandgap semiconductor compound combining aluminum nitride and gallium nitride chemistry, representing an emerging material in the III-V nitride family. This quaternary nitride system is primarily of research interest for next-generation high-power and high-frequency electronic devices, offering potential advantages in thermal stability and breakdown characteristics compared to binary GaN or AlN alone. While not yet commercially widespread, materials in this compositional space are being investigated for power electronics, RF/microwave applications, and UV optoelectronics where the tunable bandgap and lattice properties of the AlGaN system can be optimized.

High-power semiconductor devicesRF/microwave transistorsWide-bandgap power electronicsUV photodetectorsResearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	193.5	GPa	—
Shear Modulus(G)	130.7	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.641	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.364	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al3 Ga1 N4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control