Al3 Ga1

semiconductor

· Al3 Ga1

Al₃Ga₁ is a III-V semiconductor compound composed of aluminum and gallium, part of the aluminum gallium arsenide (AlGaAs) family of direct bandgap semiconductors. This material is primarily used in optoelectronic and high-frequency electronic devices, where its tunable bandgap and high electron mobility make it valuable for light-emitting applications, laser diodes, and integrated circuits operating at microwave and millimeter-wave frequencies. Engineers select AlGa compounds over pure gallium arsenide when lower bandgap energy or lattice-matching to specific substrates is required, or when integration with GaAs-based heterostructures is needed.

laser diodes and optoelectronicshigh-frequency integrated circuitssolar cells and photovoltaic devicesmicrowave and RF componentsheterostructure epitaxyquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00190	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.04300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al3 Ga1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control