Al2 Sn4 O8

semiconductor

· Al2 Sn4 O8

Al₂Sn₄O₈ is a mixed-metal oxide semiconductor compound combining aluminum and tin oxides in a defined stoichiometric ratio. This material belongs to the family of binary and ternary oxide semiconductors, which are of significant research interest for optoelectronic and sensing applications due to their tunable band gaps and potential for low-cost processing. While not yet established as a mainstream commercial material, compounds in this oxide family are being investigated for potential use in transparent electronics, gas sensing, and photocatalytic devices where the combination of constituent metals can offer advantages over single-phase oxides.

experimental semiconductor researchtransparent oxide electronicsgas sensorsphotocatalytic applicationsthin-film devicesoptoelectronic materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03990	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.797	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al2 Sn4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control