Al₂Os₁ is a semiconductor compound in the aluminum oxide family, likely representing a specific stoichiometric phase or oxygen-deficient variant of alumina. This composition falls outside common industrial aluminum oxide grades (such as Al₂O₃), suggesting either a research-phase material or a specialized dopant-modified variant being investigated for enhanced electronic or photonic properties. The material's semiconductor classification indicates potential applications in optoelectronic devices, sensors, or high-temperature electronics where tuned band gap and controlled conductivity are advantageous over conventional insulating alumina ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 186.7 | GPa | — | ||
Shear Modulus(G) | 140.1 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5830 | eV/atom | — |