Al2 Cd1 Te4

semiconductor

· Al2 Cd1 Te4

Cadmium telluride doped with aluminum (Al₂Cd₁Te₄) is a wide-bandgap semiconductor compound belonging to the II-VI semiconductor family, primarily investigated for optoelectronic and radiation detection applications. While not yet widely commercialized, this material is of research interest for its potential in photovoltaic devices, X-ray/gamma-ray detectors, and high-energy physics instrumentation, where the aluminum doping modifies electronic properties compared to binary CdTe. Engineers consider this class of material when conventional silicon-based detectors are inadequate for high-radiation environments or when specific spectral response characteristics are required.

radiation detectionsemiconductor researchphotovoltaic devicesX-ray detectorshigh-energy physics instrumentationwide-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	30.62	GPa	—
Shear Modulus(G)	18.23	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.669	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al2 Cd1 Te4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control