Al₂Bi₂O₆ is an oxide semiconductor compound combining aluminum and bismuth oxides in a layered or mixed-valence structure. This is a research-phase material primarily of interest for photocatalytic and optoelectronic applications, as the bismuth oxide component can introduce favorable band gap engineering and visible-light absorption characteristics compared to pure alumina. The material family belongs to complex metal oxides and is being investigated in academic and industrial research settings for potential use in environmental remediation, photovoltaics, and sensor technologies, though it has not yet achieved widespread commercial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 131.5 | GPa | — | ||
Shear Modulus(G) | -14.91 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9582 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.450 | eV/atom | — |