Al₂Bi₂Br₁₂ is a mixed-halide semiconductor compound combining aluminum, bismuth, and bromine elements. This is an experimental material studied primarily in research contexts for optoelectronic and photovoltaic applications, belonging to the broader family of halide perovskites and metal halide semiconductors. The bismuth-containing halide composition offers potential advantages for lead-free semiconductor design, making it of interest in emerging photovoltaic and radiation detection research where toxicity concerns and band-gap engineering drive material exploration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.579 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9470 | eV/atom | — |