Al₁V₁O₃ is a ternary oxide semiconductor compound combining aluminum, vanadium, and oxygen. This material belongs to the mixed-metal oxide family and is primarily investigated in research contexts for applications requiring semiconducting behavior combined with structural stability at elevated temperatures. Its potential utility spans optoelectronic devices, catalytic applications, and thin-film technologies where the synergistic properties of aluminum and vanadium oxides offer advantages over binary oxide alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 190.4 | GPa | — | ||
Shear Modulus(G) | 67.18 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00720 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.846 | eV/atom | — |