Al1 Sn1 O3

semiconductor

· Al1 Sn1 O3

Al₁Sn₁O₃ is an experimental ternary oxide semiconductor compound combining aluminum and tin oxides in a 1:1 ratio. This material is primarily investigated in research contexts for applications requiring mixed-metal oxide semiconductors, where the combination of aluminum and tin oxides may offer tunable electronic properties, enhanced chemical stability, or improved performance in specific device architectures compared to single-component oxides like Al₂O₃ or SnO₂.

experimental semiconductor researchthin-film electronicsmetal oxide heterostructurestransparent conducting oxides (potential)gas sensing devices (research)advanced ceramics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	155.1	GPa	—
Shear Modulus(G)	62.94	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01090	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.114	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al1 Sn1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control