Al1 In1 B1

semiconductor

· Al1 In1 B1

Al₁In₁B₁ is an experimental intermetallic compound combining aluminum, indium, and boron in equiatomic proportions. This material belongs to the family of advanced semiconductors and intermetallics being investigated for high-temperature electronics and optoelectronic applications where conventional semiconductors face thermal or performance limits. Research into such ternary compounds is motivated by the potential to engineer bandgap, thermal stability, and carrier mobility beyond what binary systems (like AlB₂ or InB compounds) can offer, though this particular composition remains largely in the research phase.

high-temperature electronicswide-bandgap semiconductorsexperimental intermetallicsoptoelectronic devicespower semiconductor researchadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00730	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9880	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al1 In1 B1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control