Al1 Ge1 Ru2
semiconductorAlGeRu₂ is an intermetallic compound combining aluminum, germanium, and ruthenium, belonging to the class of ternary metallic semiconductors with potential for advanced electronic and thermoelectric applications. This material is primarily of research interest rather than established industrial production, explored for its electronic band structure and potential use in high-temperature semiconductor devices, power electronics, or thermoelectric energy conversion where the combination of these elements offers tunable properties. The ruthenium content imparts thermal stability and corrosion resistance characteristics that distinguish it from binary Al-Ge systems, making it a candidate for harsh-environment semiconductor applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |