Al1 Ga3 N4

semiconductor

· Al1 Ga3 N4

Al₁Ga₃N₄ is an aluminum gallium nitride compound semiconductor, part of the III-nitride material family known for wide bandgap properties and high thermal stability. This composition represents a specific stoichiometry within the AlGaN system, which is extensively used in optoelectronic and high-power electronic devices where conventional semiconductors reach performance limits. AlGaN alloys are valued for their tunable bandgap (by varying Al/Ga ratio), enabling engineers to design ultraviolet LEDs, deep-UV emitters, high-electron-mobility transistors (HEMTs) for RF/microwave applications, and power electronics operating at elevated temperatures and frequencies where silicon-based alternatives would fail.

UV and deep-UV optoelectronicsRF/microwave high-power transistorsHigh-temperature power devicesWide-bandgap semiconductor heterostructuresMilitary and aerospace RF applicationsNext-generation solid-state lighting

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	184.0	GPa	—
Shear Modulus(G)	118.7	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.420	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8330	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al1 Ga3 N4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control