Al1 B1 N2

semiconductor

· Al1 B1 N2

AlBN₂ is an aluminum boron nitride compound belonging to the III-V semiconductor family, combining aluminum with boron nitride constituents to create a wide-bandgap semiconductor material. This composition is primarily investigated in research and advanced materials development for high-temperature and high-power electronic applications, offering potential advantages over conventional semiconductors due to its thermal stability and electrical properties. The material is notable for potential use in next-generation power electronics and RF devices where conventional silicon or GaAs semiconductors reach performance limits.

wide-bandgap semiconductorshigh-temperature electronicspower device researchRF and microwave componentsthermal management applicationsadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	262.2	GPa	—
Shear Modulus(G)	188.8	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.307	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.146	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al1 B1 N2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control