Al1 As1

semiconductor

· Al1 As1

Aluminum arsenide (AlAs) is a III-V semiconductor compound commonly used in optoelectronic and high-frequency electronic devices. It serves as a key material in heterojunction structures, quantum wells, and integrated circuits where its direct bandgap and lattice-matching properties with gallium arsenide (GaAs) enable precise control of electron transport and light emission. AlAs is notable for its role in advancing microelectronics and photonics, particularly in applications requiring high electron mobility and thermal stability at elevated temperatures.

optoelectronic deviceshigh-frequency transistorsquantum well structuresintegrated photonicslaser diodesRF/microwave components

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	68.87	GPa	—
Shear Modulus(G)	42.58	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.681	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5760	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control