Al0.99In0.01P1
semiconductor· Al0.99In0.01P1
Al₀.₉₉In₀.₀₁P is a direct-bandgap III-V semiconductor alloy consisting primarily of aluminum phosphide with 1 atomic percent indium doping. This material belongs to the aluminum phosphide family and represents a research-grade composition designed to modify the electronic and optical properties of the base AlP semiconductor through controlled indium incorporation. The indium addition tuning makes this alloy relevant for optoelectronic and high-frequency electronic devices where tailored bandgap energy and carrier transport characteristics are critical; such doped compositions are primarily investigated in laboratory and early-stage application development rather than widespread commercial production.
wide-bandgap semiconductorsUV and visible optoelectronicshigh-frequency RF/microwave devicesphotonic research materialsband-engineering applicationsexperimental semiconductor alloys
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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