Al0.99In0.01P1

semiconductor

· Al0.99In0.01P1

Al₀.₉₉In₀.₀₁P is a direct-bandgap III-V semiconductor alloy consisting primarily of aluminum phosphide with 1 atomic percent indium doping. This material belongs to the aluminum phosphide family and represents a research-grade composition designed to modify the electronic and optical properties of the base AlP semiconductor through controlled indium incorporation. The indium addition tuning makes this alloy relevant for optoelectronic and high-frequency electronic devices where tailored bandgap energy and carrier transport characteristics are critical; such doped compositions are primarily investigated in laboratory and early-stage application development rather than widespread commercial production.

wide-bandgap semiconductorsUV and visible optoelectronicshigh-frequency RF/microwave devicesphotonic research materialsband-engineering applicationsexperimental semiconductor alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.400	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.99In0.01P1

Electrical Properties

Regulatory Screening

Environmental

Export Control