Al0.8Ga0.2P1

semiconductor

· Al0.8Ga0.2P1

Al₀.₈Ga₀.₂P₁ is a direct-bandgap III-V semiconductor alloy combining aluminum, gallium, and phosphorus in a zinc-blende crystal structure. This material is primarily used in optoelectronic devices, particularly light-emitting diodes (LEDs) and laser diodes operating in the red to infrared spectral range, where it offers high quantum efficiency and reliable performance compared to pure GaP or AlP compounds.

red/amber LEDsoptoelectronic deviceslaser diodesphoton detectorshigh-brightness indicatorsvisible light communication

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.430	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.8Ga0.2P1

Electrical Properties

Regulatory Screening

Environmental

Export Control