Al0.75Ga0.25As1

semiconductor

· Al0.75Ga0.25As1

Al₀.₇₅Ga₀.₂₅As is a direct-bandgap III-V compound semiconductor formed by alloying aluminum arsenide with gallium arsenide, tuning the bandgap energy between the two parent materials. This material is widely used in optoelectronic and high-frequency electronic devices where its bandgap and lattice properties enable efficient light emission, high electron mobility, and superior performance at elevated temperatures compared to silicon-based alternatives.

heterojunction transistorsinfrared and visible LEDslaser diodeshigh-electron-mobility transistors (HEMTs)photovoltaic cellsmicrowave/millimeter-wave integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.420	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.75Ga0.25As1

Electrical Properties

Regulatory Screening

Environmental

Export Control