Al0.4In0.6P1

semiconductor

· Al0.4In0.6P1

Al₀.₄In₀.₆P is a III-V semiconductor alloy combining aluminum, indium, and phosphorus, engineered for optoelectronic and high-frequency applications. This material occupies a strategic composition point within the AlInP family, offering tailored bandgap and lattice properties for devices requiring specific wavelength emission or electrical performance. It is primarily used in integrated photonics, high-brightness LEDs (particularly red and amber emission), and heterojunction bipolar transistors (HBTs), where its direct bandgap and lattice-matched growth on GaAs substrates make it a preferred choice over wider-bandgap AlP or narrower-bandgap InP for visible light and millimeter-wave applications.

visible light LEDs (red/amber)photonic integrated circuitsheterojunction bipolar transistorshigh-frequency RF deviceslaser diode structuresoptoelectronic heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.120	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.4In0.6P1

Electrical Properties

Regulatory Screening

Environmental

Export Control