Al0.2In0.8P1

semiconductor

· Al0.2In0.8P1

Al₀.₂In₀.₈P is a III-V semiconductor alloy composed of aluminum, indium, and phosphorus, representing a composition-engineered variant within the indium phosphide material family. This quaternary-like system is primarily of research and advanced optoelectronic interest, where fine control of bandgap and lattice parameters enables optimization for infrared emitters, high-speed transistors, and integrated photonic circuits that demand performance beyond binary InP.

infrared optoelectronicshigh-electron-mobility transistors (HEMTs)monolithic integrated photonic circuitsquantum well structuresmillimeter-wave devicesresearch-phase semiconductor engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.2In0.8P1

Electrical Properties

Regulatory Screening

Environmental

Export Control