AgInTe2 is a ternary III-VI semiconductor compound composed of silver, indium, and tellurium, belonging to the class of chalcogenide semiconductors with a defect tetragonal structure. It is primarily of research and development interest for infrared optoelectronic applications, particularly in infrared detectors and nonlinear optical devices, where its direct bandgap and strong light-matter interaction in the infrared region offer advantages over binary alternatives. The material remains largely experimental but is studied as a candidate for room-temperature infrared sensing and tunable photonic applications where thermal stability and sensitivity to mid-to-far infrared wavelengths are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9300 | eV | — |