AgInN3 is a ternary compound combining silver (Ag), indium (In), and nitrogen (N), representing an experimental material in the nitride family rather than a commercial alloy. This compound exists primarily in research contexts exploring semiconducting or photonic properties of metal-nitride systems, with potential applications in optoelectronics or wide-bandgap device platforms. While not yet established in mainstream engineering practice, ternary metal nitrides like AgInN3 are investigated for next-generation electronics where the combination of metallic and nitride characteristics might enable novel light emission, detection, or high-frequency performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.734 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.040 | eV/atom | — |