AgBiSe2 is a ternary chalcogenide semiconductor compound composed of silver, bismuth, and selenium, belonging to the family of layered semiconductors with potential for thermoelectric and optoelectronic applications. This material is primarily of research interest rather than established industrial production, investigated for its narrow bandgap characteristics and potential use in mid-infrared detection and thermoelectric energy conversion where conventional semiconductors are less effective. AgBiSe2 represents a promising alternative to lead-based or toxic chalcogenides, offering the possibility of more environmentally benign solutions for thermal and infrared sensing systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 60.46 | GPa | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G) | 23.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.792 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3400 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05620 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2368 | eV/atom | — |