AgBiP2Se6 — Properties & Data | MatWorld

AgBiP2Se6

Name: AgBiP2Se6
Brand: MatWorld

semiconductor

· AgBiP2Se6

AgBiP₂Se₆ is a quaternary semiconductor compound belonging to the family of layered metal chalcogenides, combining silver, bismuth, phosphorus, and selenium into a potentially anisotropic crystalline structure. This is a research-phase material being investigated for applications requiring layered semiconductors with tunable electronic and optoelectronic properties, offering potential advantages in devices where weak van der Waals interactions between layers enable mechanical exfoliation and integration into heterostructure devices. The material's composition positions it as an alternative to more common two-dimensional semiconductors, with potential relevance to emerging technologies requiring materials with specific bandgap characteristics or nonlinear optical response.

two-dimensional semiconductor deviceslayered material heterostructuresnonlinear optics researchexfoliable semiconductorsoptoelectronic device prototypingquantum material research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Exfoliation Energy(Eexf)	81.65	meV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.420	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.180	eV	DFT · OptB88vdW
↳	2.115	eV	DFT · TBmBJ
↳	1.400	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	26.80	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.97	-	DFT · OptB88vdW
↳	6.840	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.3767	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.993	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000936	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000981	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-114.9	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	333.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	20.53	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.1649	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AgBiP2Se6

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Physical Properties

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