AgBiP2Se6
semiconductorAgBiP₂Se₆ is a quaternary semiconductor compound belonging to the family of layered metal chalcogenides, combining silver, bismuth, phosphorus, and selenium into a potentially anisotropic crystalline structure. This is a research-phase material being investigated for applications requiring layered semiconductors with tunable electronic and optoelectronic properties, offering potential advantages in devices where weak van der Waals interactions between layers enable mechanical exfoliation and integration into heterostructure devices. The material's composition positions it as an alternative to more common two-dimensional semiconductors, with potential relevance to emerging technologies requiring materials with specific bandgap characteristics or nonlinear optical response.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | — | meV/atom | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |