AgBaO3 is a mixed-metal oxide semiconductor compound containing silver, barium, and oxygen in a perovskite-related crystal structure. This is primarily a research material investigated for its electronic and ionic transport properties rather than an established commercial compound. The material family shows potential in photocatalysis, solid-state electronics, and oxygen-ion conductor applications, though it remains largely experimental; engineers would evaluate it when seeking novel oxide semiconductors with mixed-valence metal sites or enhanced catalytic activity compared to single-cation oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2470 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.915 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.9890 | eV/atom | — | ||
| ↳ | 1.940 | eV/atom | — |