AgAsSe2 is a ternary chalcogenide semiconductor compound composed of silver, arsenic, and selenium. This material belongs to the family of layered semiconductors and is primarily investigated for infrared optics, photovoltaics, and nonlinear optical applications where its bandgap and crystal structure offer advantages over binary alternatives. AgAsSe2 is notable in research contexts for mid-infrared transmission windows and potential use in specialized optical devices, though it remains largely experimental compared to more established III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 68.77 | GPa | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G) | 26.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.489 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.400 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -49.18 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01910 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.09233 | eV/atom | — |