Ag3AsSe3 is a ternary semiconductor compound combining silver, arsenic, and selenium—a material from the family of chalcogenide semiconductors with mixed-valent metal cations. This is a research-phase compound rather than a commercial material; it represents exploration in the arsenic-based chalcogenide space, a field pursued for potential optoelectronic and photonic applications where narrow bandgaps and specific refractive properties are valuable. Interest in such compounds stems from their potential use in infrared sensing, nonlinear optical devices, and photovoltaic systems where materials combining high atomic number elements with controllable electronic structure offer advantages over more conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 29.44 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 10.11 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.319 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.6300 | eV | DFT · OptB88vdW | ||
| ↳ | 1.396 | eV | DFT · TBmBJ | ||
| ↳ | 1.980 | eV | Measured | ||
Dielectric Constant (Relative Permittivity)(εr) | 15.48 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 11.76 | - | DFT · OptB88vdW | ||
| ↳ | 7.784 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.2267 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.6967 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.2991 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00240 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000993 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -237.8 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 138.1 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.75 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01710 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.07439 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data