Ag2GeS3 — Properties & Data | MatWorld

Ag2GeS3

Name: Ag2GeS3
Brand: MatWorld

semiconductor

· Ag2GeS3

Ag2GeS3 is a ternary silver germanium sulfide semiconductor compound belonging to the chalcogenide family, combining group IB (silver), group IVA (germanium), and chalcogen (sulfur) elements. This material is primarily of research interest for infrared optics and photonic applications, where its wide bandgap and optical transparency in the mid-to-far infrared region make it attractive for sensing and imaging systems. Ag2GeS3 represents an emerging alternative to more traditional infrared materials like germanium or zinc selenide, with potential advantages in specific wavelength windows, though it remains largely in the experimental phase with limited commercial production compared to established infrared semiconductors.

infrared optical devicesphotonic sensorsresearch semiconductorschalcogenide materialsthermal imaging opticsnonlinear optical applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	55.43	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3800	-	DFT · OptB88vdW
Shear Modulus(G)	14.14	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.697	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.3650	eV	DFT · OptB88vdW
↳	1.980	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)2 entries	17.91	-	DFT · OptB88vdW
↳	10.55 range 9.136–11.97median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)	10.71	-	DFT · OptB88vdW
Electron Effective Mass(m*e)	0.08333	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.1367	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.8750	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000279	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00152	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-53.29	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	260	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.2429	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ag2GeS3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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