This is a quaternary semiconductor compound containing silver, tungsten, sulfur, and nitrogen. Based on its composition, it belongs to the family of mixed-metal chalcogenide and nitride semiconductors, likely synthesized for research into novel optoelectronic or photocatalytic materials rather than established commercial production. The combination of these elements suggests potential applications in thin-film photovoltaics, photocatalysis, or specialized electronic devices where the unique electronic band structure from the Ag-W-S-N system could offer advantages over conventional binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.38 | GPa | — | ||
Shear Modulus(G) | 14.33 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00790 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3240 | eV/atom | — |