Ag0.5Ge1Pb1.75Se4
semiconductorAg0.5Ge1Pb1.75Se4 is a mixed-cation chalcogenide semiconductor belonging to the IV–VI semiconductor family, combining silver, germanium, lead, and selenium in a layered or amorphous structure. This is a research-grade compound designed for infrared optics and thermal imaging applications, where its wide bandgap and high refractive index in the mid- to long-wave infrared region make it a candidate alternative to traditional chalcogenide glasses. The material remains largely experimental; it represents a class of multinary chalcogenides being investigated for improved transparency, thermal stability, and resistance to crystallization compared to simpler binary or ternary chalcogenides, making it relevant for next-generation thermal sensors and infrared window applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |