Ag0.5Ge1Pb1.75S4
semiconductorAg0.5Ge1Pb1.75S4 is a quaternary chalcogenide semiconductor compound combining silver, germanium, lead, and sulfur in a mixed-cation sulfide structure. This material belongs to the family of complex sulfide semiconductors, which are primarily investigated for infrared optics, nonlinear optical applications, and solid-state radiation detection due to their wide bandgap tunability and strong light-matter interactions in the mid- to far-infrared spectrum. The specific Ag-Ge-Pb-S composition is largely experimental and of research interest rather than established in high-volume industrial production; it represents an effort to optimize bandgap and optical properties by combining multiple cation sites that independently contribute to electronic structure.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |